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參數(shù)資料
| 型號： | IRG4PF40UD |
| 廠商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小時 |
| 文件頁數(shù)： | 29/35頁 |
| 文件大小： | 112K |
| 代理商： | IRG4PF40UD |
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ACCELERATEDMOISTURE RESISTANCE (A/C)Unbiased
Conditions
Temperature:
Pressure:
Bias:
Duration:
Test points:
121°C
15Ibs psig
None
96 Hours nominal
96 Hours
Purpose
Failure Modes
Sensitive Parameters
V
(BR)CES,
V
CE(on)
Accelerated Moisture Resistance test is performed to evaluate the moisture resistance
of non-hermetic packages. Severe conditions of pressure, humidity and temperature
are applied that accelerate the penetration of moisture through the interface of the
encapsulant and the conductors that pass through it.
There are two failure modes which have been observed. The first mode, degradation
of the breakdown characteristics of the devices, can occur.
The second failure mode that has been observed is due to cathodic corrosion of
aluminum emitter bonding pad. Water will ingress to the top of the die. It is possible
for contaminants to work their way into the active area of the device while under
pressure in the presence of water. For that reason, the devices and test board are
cleaned prior to use. Then, throughout the course of the testing, the parts and the test
boards are never brought into contact with human contaminant.
IGBT / CoPack
Quarterly Reliability Report
Page 29 of 35
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PDF描述 |
|---|---|
| IRG4PG40FD | Fit Rate / Equivalent Device Hours |
| IRG4PG40KD | Fit Rate / Equivalent Device Hours |
| IRG4PG40MD | Fit Rate / Equivalent Device Hours |
| IRG4PG40SD | Fit Rate / Equivalent Device Hours |
| IRG4PG40UD | Fit Rate / Equivalent Device Hours |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4PF50W | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PF50WD | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PF50WD-201P | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IRG4PF50WDPBF | 功能描述:IGBT 晶體管 900V Warp 20-100kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PF50WPBF | 功能描述:IGBT 晶體管 900V Warp 20-100kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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