- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377518 > IRG4PH40FD (International Rectifier) Fit Rate / Equivalent Device Hours PDF資料下載
參數(shù)資料
| 型號： | IRG4PH40FD |
| 廠商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小時 |
| 文件頁數(shù)： | 25/35頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IRG4PH40FD |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁當前第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
HIGH TEMPERATURE GATE BIAS (HTGB)
Test circuit
Conditions
DUT
Bias:
Temperature:
Duration:
Test points:
Vge = As required
Tmax
2000 Hours nominal
168, 500, 1000,
1500, 2000 Hours nominal.
DC
BIAS
D
= Diode for CoPack devices only
Purpose
Failure Modes
Sensitive Parameters
I
CES,
V
GE(th)
The purpose of High Temperature Gate Bias is to stress the devices with the
applied bias to the gate while at elevated junction temperature to accelerate time
dependent dielectric breakdown of the gate structure.
D
The primary failure modes for long term gate stress is a rupture of the gate oxide,
causing either a resistive short between gate-to-emitter or gate-to-collector or what
appears to be a low breakdown diode between the gate and source.
The oxide breakdown has been attributed to the degradation in time of existing
defects in the thermally grown oxide. These defects can take form of localized
thickness
variations,
structural
anomalies
particulate, within the oxide.
or
the
presence
of
sub-micron
As with HTRB, extreme care must be exercised in the course of a long term test to
avoid potential hazards such as electrostatic discharge or electrical overstress to
the gate during test. Failures arising from this abuse are virtually indistinguishable
from true oxide breakdown which result from the actual stress test.
IGBT / CoPack
Quarterly Reliability Report
Page 25 of 35
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRG4PH40MD | Fit Rate / Equivalent Device Hours |
| IRG4PF50WDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PF50WPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4PF50WD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PH30KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4PH40K | 功能描述:IGBT UFAST 1200V 30A TO-247AC RoHS:否 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IRG4PH40KD | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PH40KD-E | 制造商:International Rectifier 功能描述:1200V 18.000A COPAK 247 / IGBT : JA / DI |
| IRG4PH40KDPBF | 功能描述:IGBT 晶體管 1200V ULTRAFAST 4-20 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PH40K-E | 制造商:International Rectifier 功能描述:1200V 30.000A TO-247 / IGBT : JA / DISCR |
發(fā)布緊急采購，3分鐘左右您將得到回復。