參數(shù)資料
型號(hào)： IRG4PH40FD
廠商： International Rectifier
英文描述： Fit Rate / Equivalent Device Hours
中文描述： FIT率/等效器件小時(shí)
文件頁(yè)數(shù)： 5/35頁(yè)
文件大?。?/td> 112K
代理商： IRG4PH40FD
Fit Rate / Equivalent Device Hours
λ
= Proportion allowed system failures
Time period
X
1
X
10
9
=
FITS
No. of devices
In the case of the example,
λ
=
0.01 Failures
720 Hours
X
1
=
10
9
=
14 FITS
1000 Devices
or 14 FITs or 14 failures per 10
9
devices hours.
Traditionally, reliability results have been presented in terms of Mean-Time-To-Failure
or Median-Time-To-Failure.
While these results have their value, they do not
necessarily tell the designer what he most needs to know. For example, the Median-
Time-To-Failure tells the engineer how long it will take for half a particular lot of
devices to fail. Clearly no designer wishes to have a 50% failure rate within a
reasonable equipment lifetime. Of greater interest, therefore, is the time to failure of a
much smaller percentage of devices say 1% or 0.1%. For example, in a given
application one failure per hundred units over five years is an acceptable failure rate
for the equipment, the designer knows that time to accumulate 1% failure of that
components per unit, then no more than 0.1% of the components may fail in five
years. Therefore, the IGBT / CoPack reliability or operating-life data is presented in
terms of the time it will take to produce a prescribed number of failures under given
operating conditions.
To obtain a perspective of failure rate from an example, let us assume that an
electronic system contains 1,000 semiconductor devices, and that it can tolerate 1%
system failures per month. The equation for the device failure is:
IGBT / CoPack
Quarterly Reliability Report
Page 5 of 35
相關(guān)PDF資料
PDF描述
IRG4PH40MD Fit Rate / Equivalent Device Hours
IRG4PF50WDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PF50WPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4PH40K 功能描述:IGBT UFAST 1200V 30A TO-247AC RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IRG4PH40KD 制造商:International Rectifier 功能描述:IGBT TO-247
IRG4PH40KD-E 制造商:International Rectifier 功能描述:1200V 18.000A COPAK 247 / IGBT : JA / DI
IRG4PH40KDPBF 功能描述:IGBT 晶體管 1200V ULTRAFAST 4-20 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4PH40K-E 制造商:International Rectifier 功能描述:1200V 30.000A TO-247 / IGBT : JA / DISCR
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