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參數(shù)資料
| 型號： | IRG4PH40SD |
| 廠商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小時 |
| 文件頁數(shù)： | 28/35頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IRG4PH40SD |
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POWER CYCLING (P/C) Unbiased
Test circuit
Conditions
Bias
Temperature
Duration
Test points
Set to give
T = 100°C
Tj =
100°C
10000 Cycles
2500, 5000, 7500, 10000 Nominal
D
DC
BIAS
Input
Bias
D
= Diode for CoPack devices only
Purpose
Failure Modes
Sensitive Parameters
I
CES
, V
(BR)CES
,
R
θ
JC
,
V
CE(on)
The purpose of Power Cycling is to simulate the thermal and current pulsing
stresses which devices will encounter in actual circuit applications when either the
equipment is turned on and off or power is applied to the device in short bursts
interspersed with quiescent, low power periods. The simulation is achieved by the
on/off application of power to each device while they are in the active linear
region.
The primary failure mode for power cycling is a thermal fatigue of the
silicon/metal interfaces and metal/metal interfaces.
thermomechanical stresses from the heating and cooling, will cause electrical or
thermal performance or degrade.
The fatigue, due to the
If the degradation occurs at the header/die interface, then the thermal impedance
R
θ
JC
, will begin to increase well before any electrical effect is seen. If the
degradation occurs at the wire bond/die interface or the wire bond/post interface,
then on resistance,
V
CE(on)
, will slowly increase or become unstable with time.
The thermal impedance, when measured during this time may appear to
decrease or change erratically.
The mechanical stresses from the application of power can also propagate
fractures in the silicon when the die is thermally mismatched to the solder/heat
sink system. These fractures will manifest themselves in the form of shorted
gates or degraded breakdown characteristics (
V
(BR)CES
).
IGBT / CoPack
Quarterly Reliability Report
Page 28 of 35
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGNC30FD2 | Fit Rate / Equivalent Device Hours |
| IRG4BG40FD | Fit Rate / Equivalent Device Hours |
| IRG4BG40KD | Fit Rate / Equivalent Device Hours |
| IRG4BG40MD | Fit Rate / Equivalent Device Hours |
| IRG4BG40SD | Fit Rate / Equivalent Device Hours |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4PH40U | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PH40UD | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PH40UD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PH40UD2-E | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PH40UD2-EP | 功能描述:IGBT 晶體管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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