參數(shù)資料
型號(hào): IRG4PH40SD
廠商: International Rectifier
英文描述: Fit Rate / Equivalent Device Hours
中文描述: FIT率/等效器件小時(shí)
文件頁(yè)數(shù): 6/35頁(yè)
文件大?。?/td> 112K
代理商: IRG4PH40SD
Using IGBT Reliability Information
Classic Bathtub Curve for failure rate of solid state devices
λ
( t )
Infant
Failures
Wearout
Failures
Random Failures
Log Time
Reliability is the probability that a semiconductor device will perform its
specified function in a given environment for a specified period of time.
Reliability is quality over time & environmental conditions.
Reliability can be defined as a probability of failure-free performance of a
required function, under a specified environment, for a given period of time.
The reliability of semiconductors has been extensively studied and the data
generated from these works is widely used in industry to estimate the
probabilities of system lifetimes. The reliability of a specific semiconductor
device is unique to the technology process used in fabrication and to the
external stress applied to the device.
In order to understand the reliability of specific product like the IGBT it is
useful to determine the failure rate associated with each environmental stress
that IGBT's encounter.
The values reported in this report are at a 60% upper confidence limit and the
equivalent device hours at state of working temperature of 90°C. It has been
shown that the failure rate of semiconductors in general. when followed for a
long period of time, exhibits what has been called a "Bathtub Curve" when
plotted against time for a given set of environmental conditions.
t
L
IGBT / CoPack
Quarterly Reliability Report
Page 6 of 35
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4PH40U 制造商:International Rectifier 功能描述:IGBT TO-247
IRG4PH40UD 制造商:International Rectifier 功能描述:IGBT TO-247
IRG4PH40UD2 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD2-E 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD2-EP 功能描述:IGBT 晶體管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube