參數(shù)資料
型號(hào): IRGPC50M
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
文件頁數(shù): 3/6頁
文件大?。?/td> 109K
代理商: IRGPC50M
C-331
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
IRGPC50M
0
20
40
60
80
0.1
1
10
100
L
f, Frequency (kHz)
60% of rated
voltage
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
TJ
Tsink
Gate drive as specified
Power Dissipation = 40W
Triangular wave:
Clamp voltage:
80% of rated
1
10
100
1000
0.1
1
10
C
I
150°C
25°C
V , Collector-to-Emitter Voltage (V)
V = 15V
20μs PULSE WIDTH
1
10
100
1000
5
10
15
20
C
I
150°C
25°C
V , Gate-to-Emitter Voltage (V)
V = 100V
5μs PULSE WIDTH
相關(guān)PDF資料
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