參數(shù)資料
型號(hào): IRGPC50M
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
文件頁(yè)數(shù): 5/6頁(yè)
文件大?。?/td> 109K
代理商: IRGPC50M
C-333
IRGPC50M
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
0
1000
2000
3000
4000
5000
6000
1
10
100
C
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
30
60
90
120
G
V
Q , Total Gate Charge (nC)
V = 400V
I = 35A
3.4
3.6
3.8
4.0
4.2
4.4
4.6
0
10
20
30
40
50
60
T
R , Gate Resistance ( )
W
V = 480V
V = 15V
T = 25°C
I = 35A
0.1
1
10
100
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100
120 140
160
T
R = 5
V = 15V
V = 480V
I = 17A
I = 35A
I = 70A
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