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參數(shù)資料
| 型號： | IRGPC50S |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(標準速度絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（標準速度絕緣柵型雙極型晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 108K |
| 代理商： | IRGPC50S |
C-34
IRGPC50S
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
—
120
—
16
—
52
—
52
—
59
—
1200 1400
—
500
—
0.35
—
15
—
16
—
26
—
58
—
2000
—
1100
—
28
—
13
—
3100
—
240
—
37
Conditions
150
23
90
—
—
I
C
= 41A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 41A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
nC
See Fig. 8
ns
700
—
—
22
—
—
—
—
—
—
—
—
—
mJ
See Fig. 9, 10, 11, 14
T
J
= 150°C,
I
C
= 41A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 10, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
ns
mJ
nH
pF
See Fig. 7
Notes:
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs,
single shot.
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temp. Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
—
20
—
—
0.75
—
1.4
—
1.9
—
1.5
3.0
—
—
-9.3
17
34
—
—
—
—
—
—
Conditions
—
—
—
1.6
—
—
5.5
—
—
250
1000
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 41A
I
C
= 80A
I
C
= 41A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 41A
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 5.0
, ( See fig. 13a )
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