參數(shù)資料
型號(hào)： IRGPF40F
廠商： International Rectifier
英文描述： Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管)
中文描述： 絕緣門雙極晶體管（IGBTs）（快速絕緣柵型雙極型晶體管）
文件頁數(shù)： 2/6頁
文件大小： 108K
代理商： IRGPF40F
C-262
IRGPF40F
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
—
45
—
8.7
—
15
—
28
—
12
—
170
—
110
—
0.52
—
1.05
—
1.57
—
27
—
14
—
250
—
240
—
3.0
—
13
—
1200
—
91
—
15
Conditions
68
13
23
—
—
320
300
—
—
3.1
—
—
—
—
—
—
—
—
—
I
C
= 17A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 17A, V
CC
= 720V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
nC
See Fig. 8
ns
mJ
See Fig. 9, 10, 11, 14
T
J
= 150°C,
I
C
= 17A, V
CC
= 720V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
See Fig. 10, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
ns
mJ
nH
pF
See Fig. 7
Notes:
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 10
, ( See fig. 13a )
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs,
single shot.
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
900
—
20
—
—
0.80
—
2.5
—
3.2
—
2.9
3.0
—
—
-12
5.2
13
—
—
—
—
1000
—
—
±100
Conditions
—
—
—
3.3
—
—
5.5
—
—
250
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 17A
I
C
= 31A
I
C
= 17A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 250μA
V
CE
= 100V, I
C
= 17A
V
GE
= 0V, V
CE
= 900V
V
GE
= 0V, V
CE
= 900V, T
J
= 150°C
V
GE
= ±20V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
mV/°C
S
μA
I
GES
Gate-to-Emitter Leakage Current
nA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
相關(guān)PDF資料
PDF描述
IRGPH20 INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A)
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IRGPH40F INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A)
IRGPH40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)
IRGPH40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=18A)
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