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參數(shù)資料
| 型號(hào)： | IRGPF40F |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門(mén)雙極晶體管（IGBTs）（快速絕緣柵型雙極型晶體管） |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大小： | 108K |
| 代理商： | IRGPF40F |
C-265
IRGPF40F
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
0
400
800
1200
1600
2000
2400
1
10
100
C
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
10
Q , Total Gate Charge (nC)
20
30
40
50
G
V
V = 400V
I = 17A
1.54
1.58
1.62
1.66
1.70
1.74
1.78
0
10
20
30
40
50
60
T
R , Gate Resistance ( )
W
V = 720V
V = 15V
T = 25°C
I = 17A
0.1
1
10
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
T
I = 34A
I = 17A
I = 8.5A
R = 10
V = 15V
V = 720V
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| IRGPH20 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A) |
| IRGPH30MD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=9.0A) |
| IRGPH40F | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A) |
| IRGPH40FD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A) |
| IRGPH40MD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=18A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGPF50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| IRGPF50F | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPH20 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A) |
| IRGPH20M | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPH20S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A) |
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