參數(shù)資料
型號(hào): IRH8054
廠商: International Rectifier
英文描述: 60Volt, 0.025Ω, MEGA RAD HARD HEXFET TRANSISTOR(60V, 0.025Ω, MEGA抗輻射 HEXFET 晶體管)
中文描述: 60Volt,0.025Ω,美佳RAD數(shù)據(jù)通信硬的HEXFET晶體管(60V的,0.025Ω,美佳抗輻射的HEXFET晶體管)
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 146K
代理商: IRH8054
IRH7054, IRH8054 Devices
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
60
Typ
0.053
Max Units
Test Conditions
VGS = 0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
2.0
12
0.025
0.028
4.0
25
250
VGS = 12V, ID =32A
VGS = 12V, ID = 45A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 35A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 35A
VDS = Max Rating x 0.5
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
5.0
100
-100
200
60
75
27
100
75
75
nC
VDD = 30V, ID = 35A,
RG = 2.35
LS
Internal Source Inductance
13
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4100
2000
560
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
Measured fromdrain lead,
6mm(0.25 in) frompackage
to center of die.
Measured fromsource lead,
6mm(0.25 in) frompackage
to source bonding pad.
Modified MOSFET symbol show-
μ
A
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
Max Units
45
210
Test Conditions
Modified MOSFET symbol showing the integral
reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.4
280
2.2
V
ns
μ
C
T
j
= 25°C, IS = 35A, VGS = 0V
Tj = 25°C, IF = 35A, di/dt
100A/
μ
s
VDD
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthCS
Junction-to-Sink
RthJA
Junction-to-Ambient
Min Typ Max
0.12
Units
Test Conditions
0.83
30
°C/W
Typical socket mount
* Current is limited by pin diameter.
Rad
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