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參數(shù)資料
| 型號： | IRH8054 |
| 廠商： | International Rectifier |
| 英文描述： | 60Volt, 0.025Ω, MEGA RAD HARD HEXFET TRANSISTOR(60V, 0.025Ω, MEGA抗輻射 HEXFET 晶體管) |
| 中文描述： | 60Volt，0.025Ω，美佳RAD數(shù)據(jù)通信硬的HEXFET晶體管（60V的，0.025Ω，美佳抗輻射的HEXFET晶體管） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 146K |
| 代理商： | IRH8054 |
www.irf.com
3
IRH7054, IRH8054 Devices
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The
hardness assurance program at International Recti-
fier comprises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 5 and a V
bias condition equal to 80% of the
device rated voltage per note 6. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 10
5
Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRH7054. Post-irradiation limits of the devices
irradiated to 1 x 10
6
Rads (Si) are presented in Table
1, column 2, IRH8054. The values in Table 1 will be
met for either of the two low dose rate test circuits that
are used. Both pre- and post-irradiation performance
are tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec (See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
48
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
Test Conditions
V
DSS
48
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
190
—
—
—
480
—
—
—
0.8
190
—
—
—
60
—
A
Table 3. Single Event Effects
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Cu 28
3x 10
5
~43 54
-5
Table 1. Low Dose Rate
Parameter
IRH7054
100K Rads (Si) 1000K Rads (Si)
Units
Min
Max
Min
60
—
60
2.0
4.0
1.25
—
100
—
—
-100
—
—
25
—
—
0.027
—
IRH8054
Test Conditions
Max
—
4.5
100
-100
50
0.027
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= 12V, I
D
= 45A
nA
μA
V
SD
—
1.4
—
1.4
V
TC = 25°C, IS = 35A,V
GS
= 0V
Radiation Characteristics
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