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參數(shù)資料
| 型號(hào)： | IRHF58Z30 |
| 廠商： | International Rectifier |
| 英文描述： | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 30V的N通道通孔抗輻射功率MOSFET（30V的，通孔安裝抗輻射功率?溝道馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | IRHF58Z30 |
www.irf.com
5
Pre-Irradiation
IRHF57Z30
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
2500
3000
3500
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
12A
V
= 15V
DS
V
= 24V
DS
0.1
1
10
100
0.0
1.0
2.0
3.0
4.0
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
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|---|---|
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