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參數(shù)資料
| 型號： | IRHF7230 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET MOS場效應(yīng)管) |
| 中文描述： | 的HEXFET晶體管（馬鞍山的HEXFET場效應(yīng)管） |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 302K |
| 代理商： | IRHF7230 |
IRHF7230, IRHF8230,JANSR-,JANSH-,2N7262 Devices
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
Typ
—
0.25
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
2.0
2.5
—
—
—
— 0.36
VGS = 12V, ID = 5.5A
—
4.0
V
VDS = VGS, ID = 1.0mA
—
—
S (
)
VDS > 15V, IDS = 3.5A
—
25
VDS= 0.8 x Max Rating,VGS=0V
—
250
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
—
100
—
-100
—
50
VGS =12V, ID = 5.5A
—
10
nC
VDS = Max Rating x 0.5
—
25
—
25
VDD = 100V, ID = 5.5A,
—
40
—
60
—
45
5.0
—
nH
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
0.35
VGS = 12V, ID = 3.5A
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
VGS = 20V
VGS = -20V
RG = 7.50
LS
Internal Source Inductance
—
15
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1100
250
55
VGS = 0V, VDS = 25V
f = 1.0MHz
—
—
pF
Pre-Irradiation
nA
ns
μ
A
Measured from drain
lead, 6mm (0.25 in)
from package to center
Modified MOSFET sym-
inductances.
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
5.5
22
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
400
3.0
V
ns
μ
C
T
j
= 25°C, IS = 5.5A, VGS = 0V
Tj = 25°C, IF = 5.5A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Rth-PCB
Junction-to-Ambient
Min Typ Max
—
—
—
— 175 Typical socket mount
Units
Test Conditions
5.0
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