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參數(shù)資料
| 型號(hào)： | IRHG93110 |
| 廠商： | International Rectifier |
| 英文描述： | Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率MOSFET) |
| 中文描述： | 通孔抗輻射功率MOSFET（100V的，通孔安裝抗輻射功率MOSFET的） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | IRHG93110 |
www.irf.com
3
Radiation Characteristics
IRHG9110
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -100 — -100 — V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
- 2.0 - 4.0 -2.0 -5.0
I
GSS
Gate-to-Source Leakage Forward
— -100 — -100 nA
I
GSS
Gate-to-Source Leakage Reverse
— 100 — 100
I
DSS
Zero Gate Voltage Drain Current
— -25 — -25 μA
R
DS(on)
Static Drain-to-Source
— 1.06 — 1.06
V
GS
= -12V, I
D
=-0.5A
On-State Resistance (TO-39)
R
DS(on)
Static Drain-to-Source
— 1.1 — 1.1
V
GS
= -12V, I
D
=-0.5A
On-State Resistance (MO-036AB)
V
SD
Diode Forward Voltage
— -2.5 — -2.5 V V
GS
= 0V, IS = -0.75A
100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
=-80V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHG9110
2. Part number IRHG93110
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
VGS
V
Cu
Br
I
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=5V @V
=10V @V
=15V @V
=20V
Cu
28.0
285 43.0 -100 -100 -100 -70 -60
Br
36.8
305 39.0 -100 -100 -70 -50 -40
I
59.8
343 32.6 -60 — — — —
LET
Energy Range
V
DS
(V)
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