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參數(shù)資料
| 型號(hào)： | IRHG93110 |
| 廠商： | International Rectifier |
| 英文描述： | Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率MOSFET) |
| 中文描述： | 通孔抗輻射功率MOSFET（100V的，通孔安裝抗輻射功率MOSFET的） |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | IRHG93110 |
www.irf.com
7
Pre-Irradiation
IRHG9110
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
-12V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
-12V
D.U.T.
V
DS
+
I
D
I
G
-3mA
V
GS
.3
μ
F
50K
.2
μ
F
-12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
-
.
25
50
75
100
125
150
0
40
80
120
160
200
Starting T , Junction Temperature ( C)
E
A
ID
TOP
BOTTOM
-0.34A
-0.47A
-0.75A
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