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| 型號： | IRHN8230 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) |
| 中文描述： | 晶體管N溝道（BVdss \u003d 200V的電壓，的Rds（on）\u003d 0.40ohm，身份證\u003d 9.0,9.0） |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 513K |
| 代理商： | IRHN8230 |
Radiation Performance of Mega Rad Hard HEXFETs
IRHN7230, IRHN8230 Devices
Radiation Characteristics
International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier uses
two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a V
DSS
bias condition equal to 80% of the device rated voltage
per note 7 and figure 8b. Pre- and post-radiation limits
of the devices irradiated to 1 x 10
5
Rads (Si) are identi-
cal and are presented in Table 1, column 1, IRHN7230.
Device performance limits at a post radiation level of 1
x 10
6
Rads (Si) are presented in Table 1, column 2,
IRHN8230. The values in Table 1 will be met for either of
the two low dose rate test circuits that are used. Typi-
cal delta curves showing radiation response appear in
figures 1 through 5. Typical post-radiation curves appear
in figures 10 through 17.
Both pre- and post-radiation performance are tested and
specified using the same drive circuitry and test condi-
tions in order to provide a direct comparison. It should
be noted that at a radiation level of 1 x 10
5
Rads (Si), no
change in limits are specified in DC parameters. At a
radiation level of 1 x 10
6
Rads (Si), leakage remains
low and the device is usable with no change in drive
circuitry required.
High dose rate testing may be done on a special re-
quest basis, using a dose rate up to 1 x 10
12
Rads (Si)/
Sec. Photocurrent and transient voltage waveforms are
shown in figure 7 and the recommended test circuit to
be used is shown in figure 9.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. The effects
on bulk silicon of the type used by International Recti-
fier on RAD HARD HEXFETs are shown in figure 6.
Single Event Effects characterization is shown in
Table 3.
Table 1. Low Dose Rate
Parameter
IRHN7230
100K Rads (Si) 1000K Rads (Si)
Units
min.
max.
min.
200
—
200
2.0
4.0
1.25
—
100
—
—
-100
—
—
25
—
—
0.40
—
IRHN8230
Test Conditions
max.
—
4.5
100
-100
25
0.53
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0 mA
V
GS
= V
DS
, I
D
= 1.0 mA
V
GS
= +20V
V
GS
= -20V
V
DS
= 0.8 x Max Rating, V
GS
= 0
V
GS
= 12V, I
D
= 6.0A
nA
μ
A
V
SD
—
1.6
—
1.6
V
TC = 25°C, IS = 9.0A,V
GS
= 0V
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min. Typ Max. Min. Typ. Max.
Units
—
—
160
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
160
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
8.0 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
1.0
20
—
—
—
160
—
—
—
20
20
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
To Order
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~41
V
DS
Bias
(V)
160
V
GS
Bias
(V)
-5
Parameter
Typ.
Units
Ion
BVDSS
200
V
Ni
Next Data Sheet
Index
Previous Datasheet
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