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參數(shù)資料
| 型號(hào)： | IRHN93130 |
| 廠商： | International Rectifier |
| 英文描述： | P-Channel,-100 Volt, 0.3Ω, RAD HARD HEXFET(P溝道,-100 V, 0.3Ω,抗輻射HEXFET晶體管) |
| 中文描述： | P溝道，-100伏，0.3Ω，RAD數(shù)據(jù)通信硬的HEXFET性（P溝道，-100五，0.3Ω，抗輻射的HEXFET晶體管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 119K |
| 代理商： | IRHN93130 |
IRHN9130, IRHN93130 Device
Pre-Irradiation
2
www.irf.com
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
-11
-44
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.0
250
0.84
V
ns
μ
C
T
j
= 25°C, IS = -11A, VGS = 0V
Tj = 25°C, IF = -11A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
-100
—
Typ
—
-0.1
Max Units
—
—
Test Conditions
VGS =0 V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
2.5
—
—
—
—
—
—
—
—
0.3
0.325
-4.0
—
-25
-250
VGS = -12V, ID = -7.0A
VGS = -12V, ID = -11A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -7.0A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS =-20 V
VGS = 20V
VGS = -12V, ID = -11A
VDS = Max Rating x 0.5
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
-100
100
45
10
25
30
50
70
70
—
nC
VDD = -50V, ID = -11A,
RG = 7.5
LS
Internal Source Inductance
—
4.1
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
300
74
—
—
—
VGS = 0V, VDS = -25 V
f = 1.0MHz
pF
nA
nH
ns
Measured fromdrain lead,
6mm(0.25 in) frompackage
to center of die.
Measured fromsource lead,
6mm(0.25 in) frompackage
to source bonding pad.
Modified MOSFET symbol show-
μ
A
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB
Junction-to-PC board
Min Typ Max
—
—
—
7.5
Units
Test Conditions
1.67
—
soldered to a 1” square copper-clad bord
°C/W
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