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參數(shù)資料
| 型號(hào)： | IRHN93130 |
| 廠商： | International Rectifier |
| 英文描述： | P-Channel,-100 Volt, 0.3Ω, RAD HARD HEXFET(P溝道,-100 V, 0.3Ω,抗輻射HEXFET晶體管) |
| 中文描述： | P溝道，-100伏，0.3Ω，RAD數(shù)據(jù)通信硬的HEXFET性（P溝道，-100五，0.3Ω，抗輻射的HEXFET晶體管） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 119K |
| 代理商： | IRHN93130 |
IRHN9130, IRHN93130 Device
www.irf.com
5
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Pre-Irradiation
1
10
100
0
400
800
1200
1600
2000
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-11A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
100
0.0
1.0
2.0
3.0
4.0
5.0
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
°
T = 150 C
°
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
-V , Drain-to-Source Voltage (V)
-
D
I
100us
1ms
10ms
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