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參數(shù)資料
| 型號： | IRHNA9260 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 2） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 118K |
| 代理商： | IRHNA9260 |
www.irf.com
3
IRHNA9260, JANSR2N7426U
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -200 — -200 — V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
-2.0 -4.0 -2.0 -5.0 V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate-to-Source Leakage Forward
— -100 — -100 nA
I
GSS
Gate-to-Source Leakage Reverse
— 100 — 100
I
DSS
Zero Gate Voltage Drain Current
— - 25 — -25 μA V
DS
= -160V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.155 — 0.161
V
GS
= -12V, I
D
=-18A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.154 — 0.160
V
GS
= -12V, I
D
= -18A
On-State Resistance (SMD-2)
V
SD
Diode Forward Voltage
—
-3.0 — -3.0 V V
GS
= 0V, IS = -29A
100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
V
GS
= -20V
V
GS
= 20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHNA9260
2. Part number IRHNA93260
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Radiation Characteristics
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=5V @V
=10V @V
=15V @V
=20V
Cu
28.0
285 43.0 -200 -200 -200 -200 —
Br
36.8
305 39.0 -200 -200 -125 -75 —
LET
Energy Range
V
DS
(V)
-250
-200
-150
-100
-50
0
0
5
10
15
20
VGS
V
Cu
Br
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHNA93260 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNB7260 | 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| IRHNB8260 | 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| IRHNB7264SE | 250Volt, 0.11Ω, (SEE) RAD HARD HEXFET(250V, 0.11Ω,單事件效應抗輻射 HEXFET晶體管) |
| IRHNB7Z60 | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNA9260SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA93064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNA93160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNA93260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB3064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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