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參數(shù)資料
| 型號(hào)： | IRHNB7264SE |
| 廠商： | International Rectifier |
| 英文描述： | 250Volt, 0.11Ω, (SEE) RAD HARD HEXFET(250V, 0.11Ω,單事件效應(yīng)抗輻射 HEXFET晶體管) |
| 中文描述： | 250Volt，0.11Ω（見）RAD數(shù)據(jù)通信硬的HEXFET（250V，0.11Ω，單事件效應(yīng)抗輻射的HEXFET晶體管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 140K |
| 代理商： | IRHNB7264SE |
Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
IRHNB7264SE
250V
0.11
W
34A
Features:
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Lightweight
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
250Volt, 0.11
W
, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. No
compensation in gate drive circuitry is required. These
devices are also capable of surviving transient ion-
ization pulses as high as 1 x 10
12
Rads (Si)/Sec, and
return to normal operation within a few microseconds.
Since the SEE process utilizes International Rectifier’s
patented HEXFET technology, the user can expect
the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
IRHNB7264SE
www.irf.com
1
PD-91738
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRHNB7264SE
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
34
21
136
300
2.4
±20
500
34
30
2.5
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5 sec.)
3.5 (typical)
g
Pre-Irradiation
o
C
A
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| IRHNB8064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB8160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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