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參數(shù)資料
| 型號： | IRHNA93260 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 2） |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 118K |
| 代理商： | IRHNA93260 |
www.irf.com
7
IRHNA9260, JANSR2N7426U
Q
G
Q
GS
Q
GD
V
G
Charge
-12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Pre-Irradiation
25
50
75
100
125
150
0
300
600
900
1200
Starting T , Junction Temperature ( C)
E
A
ID
-13A
-18.3A
-29A
TOP
BOTTOM
Fig 12a.
Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-12V
tp
V
(BR)DSS
I
AS
D.U.T.
V
DS
+
I
D
I
G
-3mA
V
GS
.3
μ
F
50K
.2
μ
F
-12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
-
.
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