- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377522 > IRHNB7264SE (International Rectifier) 250Volt, 0.11Ω, (SEE) RAD HARD HEXFET(250V, 0.11Ω,單事件效應(yīng)抗輻射 HEXFET晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRHNB7264SE |
| 廠商： | International Rectifier |
| 英文描述： | 250Volt, 0.11Ω, (SEE) RAD HARD HEXFET(250V, 0.11Ω,單事件效應(yīng)抗輻射 HEXFET晶體管) |
| 中文描述： | 250Volt，0.11Ω（見）RAD數(shù)據(jù)通信硬的HEXFET（250V，0.11Ω，單事件效應(yīng)抗輻射的HEXFET晶體管） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | IRHNB7264SE |
IRHNB7264SE Device
www.irf.com
3
Table 1. Low Dose Rate
Parameter
IRHNB7264SE
100K Rads (Si)
Min
250
2.0
—
—
—
—
Units
Test Conditions
Max
—
4.5
100
-100
50
0.110
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= 12V, I
D
=21A
nA
μA
W
V
SD
—
1.4
V
TC = 25°C, IS = 34A,V
GS
= 0V
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
200
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
200
Test Conditions
V
DSS
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
—
10
16
1.0
—
—
—
—
—
—
10
2.3
120
—
—
—
A
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises 3 radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per note
5 and a V
DS
bias condition equal to 80% of the de-
vice rated voltage per note 6. Post-irradiation limits
of the devices irradiated to 1 x 10
5
Rads (Si) are pre-
sented in Table 1, column 1, IRHNB7264SE. The val-
ues in Table 1 will be met for either of the two low
dose rate test circuits that are used. Both pre- and
post-irradiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison. It should be
noted that at a radiation level of 1 x 10
5
Rads (Si) the
only parameter limit change is V
GSTh
minimum.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec. ( See Table 2)
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects
characterization is shown in Table 3.
Table 3. Single Event Effects
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Cu 28
3x 10
5
43 250
-5
Radiation Characteristics
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHNB7Z60 | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| IRHNB8Z60 | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| IRHNJ54Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| IRHNJ53Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| IRHNJ57Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNB7360SE | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) |
| IRHNB7460SE | 制造商:International Rectifier 功能描述: |
| IRHNB7Z60 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) |
| IRHNB8064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB8160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。