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參數(shù)資料
| 型號： | IRHNB8260 |
| 廠商： | International Rectifier |
| 英文描述： | 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| 中文描述： | 200Volt，0.070Ω，N溝道美佳RAD數(shù)據(jù)通信硬的HEXFET（為200V，0.070Ω，美佳抗輻射?溝道的HEXFET晶體管） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 110K |
| 代理商： | IRHNB8260 |
IRHNB7260, IRHNB8260 Devices
www.irf.com
3
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
160
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
160
Test Conditions
V
DSS
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
8.0 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
1.0
21
—
—
—
160
—
—
—
20
—
—
—
21
A
Table 1. Low Dose Rate
Parameter
IRHNB7260 IRHNB8260
100K Rads (Si) 1000K Rads (Si)
Units
Min
Max
Min
200
—
200
2.0
4.0
1.25
—
100
—
—
-100
—
—
25
—
—
.070
—
Test Conditions
Max
—
4.5
100
-100
50
.110
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= 12V, I
D
=27A
nA
μA
V
SD
—
1.8
—
1.8
V
TC = 25°C, IS = 43A,V
GS
= 0V
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier com-
prises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test method
1019 condition A. International Rectifier has imposed
a standard gate condition of 12 volts per note 5 and a
V
bias condition equal to 80% of the device rated
voltage per note 6. Pre- and post- irradiation limits of
the devices irradiated to 1 x 10
5
Rads (Si) are identical
and are presented in Table 1, column 1, IRHNB7260.
Post-irradiation limits of the devices irradiated to1 x10
6
Rads (Si) are presented in Table 1, column 2,
IRHNB8260. The values in Table 1 will be met for ei-
ther of the two low dose rate test circuits that are used.
Both pre- and post-irradiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 10
12
Rads (Si)/
Sec (See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Table 3. Single Event Effects
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Cu 28
3x 10
5
~43 180
-5
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