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參數(shù)資料
| 型號(hào)： | IRHNB8Z60 |
| 廠商： | International Rectifier |
| 英文描述： | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| 中文描述： | 30Volt，0.009Ω，美佳RAD數(shù)據(jù)通信硬的HEXFET（30V的，0.009Ω，美佳抗輻射?溝道的HEXFET晶體管） |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | IRHNB8Z60 |
IRHNB7Z60, IRHNB8Z60 Devices
Pre-Irradiation
www.irf.com
5
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
3000
6000
9000
12000
15000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
oss
C
iss
C
rss
1
10
100
1000
0.0
1.0
V ,Source-to-Drain Voltage (V)
2.0
3.0
4.0
5.0
6.0
I
S
V = 0 V
T = 25 C
T = 150 C
°
0
100
Q , Total Gate Charge (nC)
200
300
400
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
75A
V
= 15V
DS
V
= 24V
DS
10
100
1000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
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