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參數(shù)資料
| 型號(hào)： | IRHNJ53Z30 |
| 廠(chǎng)商： | International Rectifier |
| 英文描述： | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| 中文描述： | 30V的N通道表面安裝抗輻射功率MOSFET（30V的，表貼型抗輻射功率?溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | IRHNJ53Z30 |
www.irf.com
3
Radiation Characteristics
IRHNJ57Z30
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 30 — 30 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 10 μA
R
DS(on)
Static Drain-to-Source
— 0.024 — 0.03
V
GS
= 12V, I
D
=22A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.02 — 0.025
V
GS
= 12V, I
D
=22A
On-State Resistance (SMD-.5)
V
SD
Diode Forward Voltage
— 1.2 — 1.2 V V
GS
= 0V, IS = 22A
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=24V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHNJ57Z30, IRHNJ53Z30 and IRHNJ54Z30
2. Part number IRHNJ58Z30
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
0
5
10
15
20
25
30
35
0
-5
-10
-15
-20
VGS
V
Br
I
AU
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
37.9
255 33.5 30 30 30 25 20
I
59.4
290 28.5 25 25 20 15 10
Au
80.3
313 26.4 22.5 22.5 15
LET
Energy Range
V
DS
(V)
10 —
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHNJ57Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| IRHNJ57130 | Surface Mount Radiation Hardened Power MOSFET(表貼型抗輻射功率MOS場(chǎng)效應(yīng)管) |
| IRHNJ57230 | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表貼型抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| IRHNJ63130 | 100V, N-CHANNEL |
| IRHNJ67130 | 100V, N-CHANNEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNJ54034 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNJ54130 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 22A 3-Pin SMD-0.5 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNJ54230 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ54230SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ54234SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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