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參數(shù)資料
| 型號(hào)： | IRHNJ57Z30 |
| 廠商： | International Rectifier |
| 英文描述： | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| 中文描述： | 30V的N通道表面安裝抗輻射功率MOSFET（30V的，表貼型抗輻射功率?溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | IRHNJ57Z30 |
www.irf.com
5
Pre-Irradiation
IRHNJ57Z30
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
800
1600
2400
3200
4000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
10
20
30
40
50
60
0
5
10
15
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
22A
V
= 6V
DS
V
= 15V
DS
V
= 24V
DS
1
10
100
0.4
0.8
1.2
1.6
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
°
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID
Α
)
10 ms
T
c = 25 °C
Single Pulse
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