參數(shù)資料
型號(hào)： IRHNJ67130
廠商： International Rectifier
英文描述： 100V, N-CHANNEL
中文描述： 100V的，N溝道
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 179K
代理商： IRHNJ67130
www.irf.com
3
Radiation Characteristics
IRHNJ67130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHNJ67130, IRHNJ63130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Fig a.
Single Event Effect, Safe Operating Area
0
20
40
60
80
100
120
-20
-15
-10
-5
0
VGS
V
Br
I
Au
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(μm)
@VGS=
0V
@VGS=
-5V
@VGS=
-10V
@VGS=
-15V
@VGS=
-17V
@VGS=
-19V
@VGS=
-20V
Br
I
Au
37.46
59.72
81.44
278.5
320
333
36.03
30.97
27.53
100
100
100
100
100
100
100
100
-
100
30
-
100
-
-
100
-
-
40
-
-
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 300K Rads (Si)
1
Min
100
2.0
—
—
—
Units
Test Conditions
Max
—
4.0
100
-100
10
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Sourcee
On-State Resistance (SMD-0.5)
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 120V, V
GS
= 0V
nA
μA
—
0.045
V
GS
= 12V, I
D
= 12A
R
DS(on)
V
SD
Diode Forward Voltage
—
1.2
V
V
GS
= 0V, I
D
= 19A
— 0.042
V
GS
= 12V, I
D
= 12A
相關(guān)PDF資料
PDF描述
IRHQ53110 30V N-Channel PowerTrench MOSFET
IRHQ57110 30V N-Channel PowerTrench MOSFET
IRHQ58110 30V N-Channel PowerTrench MOSFET
IRHQ54110 30V N-Channel PowerTrench MOSFET
IRHQ9110 100V, 4 P-Channel Surface Mount Radiation Hardened Power MOSFET(100V,表貼型抗輻射功率四P溝道MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRHNJ67134 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R6 - Bulk
IRHNJ67134SCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHNJ67230 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 16A 3SMD-0.5 - Rail/Tube
IRHNJ67230SCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHNJ67230SCV 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*