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參數(shù)資料
| 型號： | IRLBL1304 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應(yīng)管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 175K |
| 代理商： | IRLBL1304 |
IRLBL1304
2
www.irf.com
Parameter
Min.
40
–––
–––
–––
1.0
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.043 –––
––– 0.0045
––– 0.0065
–––
–––
–––
–––
–––
25
–––
250
–––
100
–––
-100
–––
140
–––
39
–––
79
21
–––
350
–––
45
–––
103
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 110A
V
GS
= 4.5V, I
D
= 93
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 110A
V
DS
= 40V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 110A
V
DS
= 32V
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 20V
I
D
= 110A
R
G
= 0.9
R
D
= 0.18
,See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
7660
2150
460
–––
–––
–––
pF
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 230μH
R
G
= 25
, I
AS
= 100A. (See Figure 12)
I
SD
≤
110A, di/dt
≤
170A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4.
Uses IRLBA1304/P data and test conditions.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 110A, V
GS
= 0V
T
J
= 25°C, I
F
= 110A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
100
250
1.3
150
380
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
185
740
A
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance
–––
5.0
–––
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance
2.0
I
DSS
Drain-to-Source Leakage Current
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