參數(shù)資料
型號(hào)： IRLL014PBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 224K
代理商： IRLL014PBF
IRLL014PbF
2
www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
, di/dt
≤
90A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Notes:
V
DD=
25V, starting T
J
= 25°C, L =16 mH
R
G
= 25
, I
AS
= 2.7A. (See Figure 12)
Pulse width
≤
300μs; duty cycle
≤
2%.
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 10A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
65
0.33
1.6
130
0.65
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
60
–––
–––
0.073 –––
–––
–––
–––
–––
1.0
–––
3.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.3
–––
110
–––
17
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 5.0V, I
D
= 1.6A
V
GS
= 4.0V, I
D
= 1.4A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 1.6 A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 125°C
V
GS
= 10V
V
GS
= -10V
I
D
= 10A
V
DS
= 48V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 30V
I
D
= 10A
R
G
= 12
V/°C
0.20
0.28
2.0
–––
25
250
100
-100
8.4
3.5
6.0
–––
–––
–––
V
S
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
f
Fall Time –– 26 ––– R
D
= 2.8
,
See Fig. 10
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
nC
ns
nH
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
400
170
42
–––
–––
–––
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
pF
!
S
D
G
Between lead, 6mm(0.25in)
from package and center
of die contact.
L
S
Internal Source Inductance
Internal Drain Inductance
L
D
––– 4.0 –––
––– 6.0 –––
相關(guān)PDF資料
PDF描述
IRLL024NPBF HEXFET Power MOSFET
IRLL024ZPBF HEXFET㈢ Power MOSFET
IRLL024Z AUTOMOTIVE MOSFET
IRLL110PBF HEXFET㈢ Power MOSFET
IRLL110 HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLL014TR 功能描述:MOSFET N-Chan 60V 2.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLL014TRA 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET
IRLL014TRPBF 功能描述:MOSFET N-Chan 60V 2.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLL014TRPBFA 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET
IRLL024N 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*