- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377535 > IRLML5203PBF (International Rectifier) HEXFET㈢Power MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | IRLML5203PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 197K |
| 代理商： | IRLML5203PBF |
Parameter
Max.
-30
-3.0
-2.4
-24
1.25
0.80
10
± 20
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
11/8/04
Parameter
Max.
100
Units
°C/W
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
1
IRLML5203PbF
HEXFET Power MOSFET
R
DS(on)
max (m
98@V
GS
= -10V
165@V
GS
= -4.5V
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallest footprint. This package, dubbed the Micro3
TM
,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Description
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
PD - 94895A
V
DSS
-30V
I
D
-3.0A
-2.6A
S
G 1
2
D
3
Micro3
TM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLML5203 | HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管) |
| IRLML6302PBF | HEXFET Power MOSFET |
| IRLML6401PBF | HEXFET Power MOSFET |
| IRLMS6802PBF | HEXFET Power MOSFET |
| IRLP3803 | HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLML5203TR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 3A 3-Pin Micro T/R 制造商:International Rectifier 功能描述:3 A, 30 V, 0.098 ohm, P-CHANNEL, Si, POWER, MOSFET |
| IRLML5203TRPBF | 功能描述:MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLML5203TRPBF | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR |
| IRLML5203TRPBF-CUT TAPE | 制造商:IR 功能描述:Single P-Channel 30 V 1.25 W 9.5 nC Hexfet Power Mosfet Surface Mount - MICRO-3 |
| IRLML520TRPBF | 制造商:International Rectifier 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。