參數(shù)資料
型號(hào)： IRLML5203PBF
廠商： International Rectifier
英文描述： HEXFET㈢Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁數(shù)： 2/9頁
文件大?。?/td> 197K
代理商： IRLML5203PBF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.3A
di/dt = -100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
17
12
-1.2
26
18
V
ns
nC
Source-Drain Ratings and Characteristics
24
1.3
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
Surface mounted on FR-4 board, t
≤
Parameter
Min. Typ. Max. Units
-30
–––
––– 0.019 –––
–––
–––
–––
–––
-1.0
–––
3.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.5
–––
2.3
–––
1.6
–––
12
–––
18
–––
88
–––
52
–––
510
–––
71
–––
43
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -3.0A
V
GS
= -4.5V, I
D
= -2.6A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -3.0A
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 70°C
V
GS
= -20V
V
GS
= 20V
I
D
= -3.0A
V
DS
= -24V
V
GS
= -10V
V
DD
= -15V
I
D
= -1.0A
R
G
= 6.0
V
GS
= -10V
V
GS
= 0V
V
DS
= -25V
= 1.0MHz
V/°C
98
165
-2.5
–––
-1.0
-5.0
-100
100
14
3.5
2.4
–––
–––
–––
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
m
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
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