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參數(shù)資料
| 型號： | IS41LV16100 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 DRAM With EDO Page Mode(3.3V,1Mx16帶擴展數(shù)據(jù)輸出頁模式動態(tài)RAM) |
| 中文描述： | 100萬× 16的DRAM與江戶頁面模式（3.3伏，1Mx16帶擴展數(shù)據(jù)輸出頁模式動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 18/20頁 |
| 文件大?。?/td> | 172K |
| 代理商： | IS41LV16100 |
IS41C16100
IS41LV16100
18
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. F
03/08/00
ISSI
HIDDEN REFRESH CYCLE
(1)
(
WE
= HIGH;
OE
= LOW)
CBR
REFRESH CYCLE
(Addresses;
WE
,
OE
= DON'T CARE)
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case,
WE
= LOW and
OE
= HIGH.
2. t
OFF
is referenced from rising edge of
RAS
or
CAS
, whichever occurs last.
t
RAS
t
RAS
t
RP
t
RP
I/O
UCAS/LCAS
RAS
Open
t
CP
t
RPC
t
CSR
t
CHR
t
RPC
t
CSR
t
CHR
t
RAS
t
RAS
t
RP
UCAS/LCAS
RAS
t
CRP
t
RCD
t
RSH
t
CHR
t
AR
t
ASC
t
RAD
t
RAH
ADDRESS
Row
Column
t
ASR
t
RAL
t
CAH
I/O
Open
Open
Valid Data
t
AA
t
CAC
t
RAC
t
CLZ
t
OFF
(2)
OE
t
OE
t
ORD
t
OD
Don’t Care
Undefined
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PDF描述 |
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| IS41LV16105 | 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁模式動態(tài)RAM) |
| IS41LV16256-35K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-35T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60KI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16100/S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 16 (16-Mbit) Dynamic RAM with EDO Page Mode |
| IS41LV16100-50K | 制造商:Integrated Silicon Solution Inc 功能描述:Dynamic RAM, EDO, 1M x 16, 42 Pin, Plastic, SOJ |
| IS41LV16100-50KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100-50T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100-50TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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