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| 型號(hào)： | IS41LV16100 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 DRAM With EDO Page Mode(3.3V,1Mx16帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)RAM) |
| 中文描述： | 100萬(wàn)× 16的DRAM與江戶頁(yè)面模式（3.3伏，1Mx16帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 3/20頁(yè) |
| 文件大?。?/td> | 172K |
| 代理商： | IS41LV16100 |
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IS41C16100
IS41LV16100
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. F
03/08/00
3
ISSI
TRUTH TABLE
Function
RAS
LCAS
UCAS
WE
OE
Address t
R
/t
C
I/O
Standby
Read: Word
Read: Lower Byte
H
L
L
H
L
L
H
L
H
X
H
H
X
L
L
X
High-Z
D
OUT
Lower Byte, D
OUT
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
OUT
D
IN
Lower Byte, D
IN
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
D
OUT
D
IN
D
IN
D
OUT
, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
High-Z
High-Z
ROW/COL
ROW/COL
Read: Upper Byte
L
H
L
H
L
ROW/COL
Write: Word (Early Write)
Write: Lower Byte (Early Write)
L
L
L
L
L
H
L
L
X
X
ROW/COL
ROW/COL
Write: Upper Byte (Early Write)
L
H
L
L
X
ROW/COL
Read-Write
(1,2)
EDO Page-Mode Read
(2)
L
L
L
L
L
L
L
L
L
L
H
→
L
H
H
H
L
L
H
→
L
H
→
L
H
L
X
X
L
→
H
L
L
L
X
X
L
→
H
L
→
H
L
X
X
X
ROW/COL
ROW/COL
NA/COL
NA/NA
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
ROW/COL
ROW/NA
X
1st Cycle:
2nd Cycle:
Any Cycle:
1st Cycle:
2nd Cycle:
1st Cycle:
2nd Cycle:
Read
(2)
Write
(1,3)
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
L
L
H
L
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
L
L
H
L
EDO Page-Mode Write
(1)
EDO Page-Mode
(1,2)
Read-Write
Hidden Refresh
L
→
H
→
L
L
→
H
→
L
L
H
→
L
RAS
-Only Refresh
CBR Refresh
(4)
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS
or
UCAS
active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS
or
UCAS
active).
3. EARLY WRITE only.
4. At least one of the two
CAS
signals must be active (
LCAS
or
UCAS
).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV16105 | 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁(yè)模式動(dòng)態(tài)RAM) |
| IS41LV16256-35K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-35T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60KI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16100/S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 16 (16-Mbit) Dynamic RAM with EDO Page Mode |
| IS41LV16100-50K | 制造商:Integrated Silicon Solution Inc 功能描述:Dynamic RAM, EDO, 1M x 16, 42 Pin, Plastic, SOJ |
| IS41LV16100-50KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100-50T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100-50TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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