參數(shù)資料
型號(hào)： IS41LV16105
廠商： Integrated Silicon Solution, Inc.
英文描述： 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁模式動(dòng)態(tài)RAM)
中文描述： 100萬× 16的DRAM與快速頁面模式（3.3伏，1Mx16帶快速頁模式動(dòng)態(tài)內(nèi)存）
文件頁數(shù)： 1/18頁
文件大?。?/td> 140K
代理商： IS41LV16105
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/03/00
1
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
IS41C16105
IS41LV16105
1M x 16 (16-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
ISSI
FEATURES
TTL compatible inputs and outputs; tristate I/O
Refresh Interval:
— 1,024 cycles/16 ms
Refresh Mode:
—
RAS
-Only,
CAS
-before-
RAS
(CBR), and Hidden
JEDEC standard pinout
Single power supply:
— 5V ± 10% (IS41C16105)
— 3.3V ± 10% (IS41LV16105)
Byte Write and Byte Read operation via two
CAS
Extended Temperature Range -30
o
C to 85
o
C
Industrail Temperature Range -40
o
C to 85
o
C
DESCRIPTION
The
ISSI
IS41C16105 and IS41LV16105 are 1,048,576 x
16-bit high-performance CMOS Dynamic Random Access Memo-
ries. Fast Page Mode allows 1,024 random accesses within a single
row with access cycle time as short as 20 ns per 16-bit word. The
Byte Write control, of upper and lower byte, makes the IS41C16105
ideal for use in 16-, 32-bit wide data bus systems.
These features make the IS41C16105 and IS41LV16105 ideally
suited for high-bandwidth graphics, digital signal processing, high-
performance computing systems, and peripheral applications.
The IS41C16105 and IS41LV16105 are packaged in a
42-pin 400-mil SOJ and 400-mil 44- (50-) pin TSOP (Type II).
KEY TIMING PARAMETERS
Parameter
-50
-60
Unit
Max.
RAS
Access Time (t
RAC
)
50
60
ns
Max.
CAS
Access Time (t
CAC
)
13
15
ns
Max. Column Address Access Time (t
AA
)
25
30
ns
Min. Fast Page Mode Cycle Time (t
PC
)
20
25
ns
Min. Read/Write Cycle Time (t
RC
)
84
104
ns
PIN CONFIGURATIONS
44(50)-Pin TSOP (Type II)
42-Pin SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
PIN DESCRIPTIONS
A0-A9
Address Inputs
I/O0-15
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
Vcc
Power
GND
Ground
NC
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
FEBRUARY 2000
相關(guān)PDF資料
PDF描述
IS41LV16256-35K 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256-35T 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256-60K 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256-60KI 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256-60T 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS41LV16105-50K 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16105-50KI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16105-50T 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16105-50TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16105-60K 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
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