- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377549 > IS41LV16105 (Integrated Silicon Solution, Inc.) 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁模式動態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | IS41LV16105 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁模式動態(tài)RAM) |
| 中文描述： | 100萬× 16的DRAM與快速頁面模式（3.3伏，1Mx16帶快速頁模式動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 8/18頁 |
| 文件大小： | 140K |
| 代理商： | IS41LV16105 |
8
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. A
03/03/00
IS41C16105
IS41LV16105
ISSI
AC CHARACTERISTICS
(Continued)
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
t
WCR
Write Command Hold Time
(referenced to
RAS
)
(17)
40
—
50
—
ns
t
WP
Write Command Pulse Width
(17)
8
—
10
—
ns
t
WPZ
WE
Pulse Widths to Disable Outputs
10
—
10
—
ns
t
RWL
Write Command to
RAS
Lead Time
(17)
13
—
15
—
ns
t
CWL
Write Command to
CAS
Lead Time
(17, 21)
8
—
10
—
ns
t
WCS
Write Command Setup Time
(14, 17, 20)
0
—
0
—
ns
t
DHR
Data-in Hold Time (referenced to
RAS
)
39
—
39
—
ns
t
ACH
Column-Address Setup Time to
CAS
Precharge during WRITE Cycle
15
—
15
—
ns
t
OEH
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
8
—
10
—
ns
t
DS
Data-In Setup Time
(15, 22)
0
—
0
—
ns
t
DH
Data-In Hold Time
(15, 22)
8
—
10
—
ns
t
RWC
READ-MODIFY-WRITE Cycle Time
108
—
133
—
ns
t
RWD
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
64
—
77
—
ns
t
CWD
CAS
to
WE
Delay Time
(14, 20)
26
—
32
—
ns
t
AWD
Column-Address to
WE
Delay Time
(14)
39
—
47
—
ns
t
PC
Fast Page Mode READ or WRITE
Cycle Time
(24)
20
—
25
—
ns
t
RASP
RAS
Pulse Width
50
100K
60
100K
ns
t
CPA
Access Time from
CAS
Precharge
(15)
—
30
—
35
ns
t
PRWC
READ-WRITE Cycle Time
(24)
56
—
68
—
ns
t
COH
Data Output Hold after
CAS
LOW
5
—
5
—
ns
t
OFF
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 29)
1.6
12
1.6
15
ns
t
WHZ
Output Disable Delay from
WE
3
10
3
10
ns
t
CLCH
Last
CAS
going LOW to First
CAS
returning HIGH
(23)
10
—
10
—
ns
t
CSR
CAS
Setup Time (CBR REFRESH)
(30, 20)
5
—
5
—
ns
t
CHR
CAS
Hold Time (CBR REFRESH)
(30, 21)
8
—
10
—
ns
t
ORD
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
0
—
0
—
ns
t
REF
Auto Refresh Period (1,024 Cycles)
—
16
—
16
ms
t
T
Transition Time (Rise or Fall)
(2, 3)
1
50
1
50
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV16256-35K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-35T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60KI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16105-50K | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16105-50KI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16105-50T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16105-50TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16105-60K | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。