- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377549 > IS41LV16105 (Integrated Silicon Solution, Inc.) 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁(yè)模式動(dòng)態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號(hào)： | IS41LV16105 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁(yè)模式動(dòng)態(tài)RAM) |
| 中文描述： | 100萬(wàn)× 16的DRAM與快速頁(yè)面模式（3.3伏，1Mx16帶快速頁(yè)模式動(dòng)態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 7/18頁(yè) |
| 文件大小： | 140K |
| 代理商： | IS41LV16105 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. A
03/03/00
7
IS41C16105
IS41LV16105
ISSI
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
t
RC
Random READ or WRITE Cycle Time
84
—
104
—
ns
t
RAC
Access Time from
RAS
(6, 7)
—
50
—
60
ns
t
CAC
Access Time from
CAS
(6, 8, 15)
—
13
—
15
ns
t
AA
Access Time from Column-Address
(6)
—
25
—
30
ns
t
RAS
RAS
Pulse Width
50
10K
60
10K
ns
t
RP
RAS
Precharge Time
30
—
40
—
ns
t
CAS
CAS
Pulse Width
(26)
8
10K
10
10K
ns
t
CP
CAS
Precharge Time
(9, 25)
9
—
9
—
ns
t
CSH
CAS
Hold Time
(21)
38
—
40
—
ns
t
RCD
RAS
to
CAS
Delay Time
(10, 20)
12
37
14
45
ns
t
ASR
Row-Address Setup Time
0
—
0
—
ns
t
RAH
Row-Address Hold Time
8
—
10
—
ns
t
ASC
Column-Address Setup Time
(20)
0
—
0
—
ns
t
CAH
Column-Address Hold Time
(20)
8
—
10
—
ns
t
AR
Column-Address Hold Time
(referenced to
RAS
)
30
—
40
—
ns
t
RAD
RAS
to Column-Address Delay Time
(11)
10
25
12
30
ns
t
RAL
Column-Address to
RAS
Lead Time
25
—
30
—
ns
t
RPC
RAS
to
CAS
Precharge Time
5
—
5
—
ns
t
RSH
RAS
Hold Time
(27)
8
—
10
—
ns
t
RHCP
RAS
Hold Time from
CAS
Precharge
37
—
37
—
ns
t
CLZ
CAS
to Output in Low-Z
(15, 29)
0
—
0
—
ns
t
CRP
CAS
to
RAS
Precharge Time
(21)
5
—
5
—
ns
t
OD
Output Disable Time
(19, 28, 29)
3
15
3
15
ns
t
OE
Output Enable Time
(15, 16)
—
13
—
15
ns
t
OED
Output Enable Data Delay (Write)
20
—
20
—
ns
t
OEHC
OE
HIGH Hold Time from
CAS
HIGH
5
—
5
—
ns
t
OEP
OE
HIGH Pulse Width
10
—
10
—
ns
t
OES
OE
LOW to
CAS
HIGH Setup Time
5
—
5
—
ns
t
RCS
Read Command Setup Time
(17, 20)
0
—
0
—
ns
t
RRH
Read Command Hold Time
(referenced to
RAS
)
(12)
0
—
0
—
ns
t
RCH
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
0
—
0
—
ns
t
WCH
Write Command Hold Time
(17, 27)
8
—
10
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV16256-35K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-35T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60KI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16105-50K | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16105-50KI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16105-50T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16105-50TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16105-60K | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。