參數(shù)資料
型號(hào)： IS42S32800B-6BL
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
封裝： 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, BGA-90
文件頁(yè)數(shù)： 14/62頁(yè)
文件大?。?/td> 939K
代理商： IS42S32800B-6BL
14
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev.
B
0
5/24
/06
ISSI
IS42S32800B
WRITE with Auto Precharge
· Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n
when registered, with the data-out ap- pearing CAS latency later. The PRECHARGE to bank n will begin after
t WR is met, where t WR begins when the READ to bank m is registered. The last valid WRITE to bank n will
be data-in registered one clock prior to the READ to bank m.
WRITE With Auto Precharge Interrupted by a READ
· Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a WRITE on bank
n when registered. The PRECHARGE to bank n will begin after t WR is met, where t WR begins when the WRITE
to bank m is registered. The last valid data WRITE to bank n will be data registered one clock prior to a WRITE
to bank m.
WRITE With Auto Precharge Interrupted by a WRITE
D
IN
a
D
IN
d + 2
D
IN
d + 3
DON’T CARE
T2
T1
T4
T3
T6
T5
T0
COMMAND
T7
BANK n
NOP
D
IN
d + 1
WRITE - AP
BANK n
NOP
NOP
NOP
NOTE: 1. DQM is LOW.
BANK n,
COL a
BANK m,
COL d
WRITE - AP
BANK m
NOP
D
IN
a + 1
D
IN
a + 2
D
IN
d
Page Active
WRITE with Burst of 4
Write-Back
WR - BANK n
tRP - BANK n
tWR - BANK m
BANK m
ADDRESS
Internal
States
t
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
T2
T1
T4
T3
T6
T5
T0
COMMAND
WRITE - AP
BANK n
NOP
NOP
NOP
NOP
NOTE: 1. DQM is LOW.
BANK n,
COL a
BANK m,
COL d
READ - AP
BANK m
NOP
NOP
Page Active
READ with Burst of 4
Internal
States
t
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
WR - BANK n
RP - BANK n
t
tRP - BANKm
T7
BANK n
BANK m
ADDRESS
CLK
DQ
D
IN
a
D
IN
a + 1
D
OUT
d
D
OUT
d + 1
CAS Latency = 3 (BANK m)
DON’T CARE
相關(guān)PDF資料
PDF描述
IS42S32800B-6BLI 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6T 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6TI 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6TL 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6TLI 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S32800B-6BLI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (8Mx32) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-6BLI-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (8Mx32) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-6BL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 8Mx32 166Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-6B-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 8Mx32 166Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-6T 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 8Mx32 166Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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