參數(shù)資料
型號(hào): IS42S32800B-6BL
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
封裝: 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, BGA-90
文件頁(yè)數(shù): 28/62頁(yè)
文件大小: 939K
代理商: IS42S32800B-6BL
28
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev.
B
0
5/24
/06
ISSI
IS42S32800B
Figure 5.Self Refresh Entry &Exit Cycle
Note:To Enter SelfRefresh Mode
1. CS#,RAS#&CAS#with CKE should be low at the same clock cycle.
2. After 1 clock cycle,all the inputs including the system clock can be don ’t care except for CKE.
3. The device remains in SelfRefresh mode as long as CKE stays “l(fā)ow”.
Once the device enters SelfRefresh mode,minimum tRAS is required before exit from SelfRefresh.
To Exit SelfRefresh Mode
1. System clock restart and be stable before returning CKE high.
2. Enable CKE and CKE should be set high for minimum time of tSRX.
3. CS#starts from high.
4. Minimum tRC is required after CKE going high to complete SelfRefresh exit.
5. 2048 cycles of burst AutoRefresh is required before SelfRefresh entry and after SelfRefresh exit if the system uses burst refresh.
CLK
CKE
CS#
RAS#
CAS#
BS0,1
A0-A9
WE#
DQM
DQ
*Note 1
*Note 2
t
IS
*Note 3
*Note 4
t
RC(min)
*Note 7
*Note 5
*Note 6
*Note 8
*Note 8
Hi-Z
Hi-Z
SelfRefresh Enter
SelfRefresh Exit
Auto Refresh
SRX
t
PDE
T0
T2
T1
T3
T4
T5
T6
T7
T9
T8
T12
T11
T10
T14
T13
T15
T16
T17
T18
T19
相關(guān)PDF資料
PDF描述
IS42S32800B-6BLI 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6T 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6TI 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6TL 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6TLI 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
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