參數(shù)資料
型號(hào)： IS42S32800B
廠商： Integrated Silicon Solution, Inc.
英文描述： 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 200萬(wàn)字× 32位× 4銀行（256兆）同步動(dòng)態(tài)RAM
文件頁(yè)數(shù)： 11/62頁(yè)
文件大小： 939K
代理商： IS42S32800B
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev.
B
0
5/24
/06
11
ISSI
IS42S32800B
Read to Precharge (CAS#Latency =2,3)
5
Write command
(RAS#=”H”,CAS#=”L”,WE#=”L”,BS =Bank,A10 =”L”,A0-A7 =Column Address)
The Write command is used to write a burst of data on consecutive clock cycles from an active row in an active
bank.The bank must be active for at least tRCD(min.)before the Write command is issued.During write bursts,
the first valid data-in element will be registered coincident with the Write command.Subsequent data elements
will be registered on each successive positive clock edge (refer to the following figure).The DQs remain with high-
impedance at the end of the burst unless another command is initiated.The burst length and burst sequence are
determined by the mode register,which is already programmed.A full-page burst will continue until terminated (at
the end of the page it will wrap to column 0 and continue).
CLK
COMMAND
READ A
NOP
NOP
NOP
NOP
Activate
NOP
NOP
Precharge
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
ADDRESS
t
RP
Bank,
Col A
Bank(s)
Row
CAS# latency=2
tCK2, DQs
CAS# latency=3
tCK3, DQs
T0
T2
T1
T3
T4
T5
T6
T7
T8
Bank,
CLK
COMMAND
DIN A 3
NOP
WRITEA
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DIN A 0
DIN A 1
DIN A 2
DQ0 - DQ3
The first data element and the write
are registered on the same clock edge.
Burst Write Operation (Burst Length =4,CAS#Latency =2,3)
Extra data is masked.
don’t care
T0
T2
T1
T3
T4
T5
T6
T7
T8
A write burst without the AutoPrecharge function may be interrupted by a subsequent Write, BankPrecharge/
PrechargeAll,or Read command before the end of the burst length.An interrupt coming from Write command can
occur on any clock cycle following the previous Write command (refer to the following figure).
相關(guān)PDF資料
PDF描述
IS42S32800B-6B 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6BI 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6BL 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6BLI 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6T 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S32800B-6B 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 8Mx32 166Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-6BI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (8Mx32) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-6BI-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (8Mx32) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-6BL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 8Mx32 166Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-6BLI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (8Mx32) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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