參數(shù)資料
型號： IS42S32800B
廠商： Integrated Silicon Solution, Inc.
英文描述： 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 200萬字× 32位× 4銀行（256兆）同步動態(tài)RAM
文件頁數(shù)： 7/62頁
文件大?。?/td> 939K
代理商： IS42S32800B
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev.
B
0
5/24
/06
7
ISSI
IS42S32800B
Commands
1
BankActivate
(RAS#=”L”,CAS#=”H”,WE#=”H”,BS =Bank,A0-A11 =Row Address)
The BankActivate command activates the idle bank designated by the BS0,1 (Bank Select) signal.By latching the
row address on A0 to A11 at the time of this command,the selected row access is initiated.The read or write
operation in the same bank can occur after a time delay of tRCD(min.)from the time of bank activation.A
subsequent BankActivate command to a different row in the same bank can only be issued after the previous
active row has been precharged (refer to the following figure).The minimum time interval between successive
BankActivate commands to the same bank is defined by tRC(min.).The SDRAM has four internal banks on the
same chip and shares part of the internal circuitry to reduce chip area;therefore it restricts the back-to-back
activation of the four banks.tRRD(min.)specifies the minimum time required between activating different banks.
After this command is used,the Write command and the Block Write command perform the no mask write
operation.
T0
T1
T2
T3
CLK
ADDRESS
Tn+3
Tn+4
Tn+5
Tn+6
..............
COMMAND
..............
..............
NOP
NOP
NOP
NOP
RAS# - CAS# delay (
t
RCD
)
RAS#- RAS# delay time (
t
RRD
)
RAS# Cycle time (
t
RC
)
RBank A
Bank A
RBank B
RBank A
Bank A
R/W A with
AutoPrecharge
Bank B
Bank A
Auto Precharge
Begin
:"H" or "L"
Bank
2
BankPrecharge command
(RAS#=”L”,CAS#=”H”,WE#=”L”,BS =Bank,A10 =”L”)
The BankPrecharge command precharges the bank disignated by BS0,1 signal.The
precharged bank is switched from the active state to the idle state.This command can be asserted anytime after
tRAS(min.)is satisfied from the BankActivate command in the desired bank.The maximum time any bank can be
active is specified by tRAS(max.).Therefore,the precharge function must be performed in any active bank within
tRAS(max.).At the end of precharge,the precharged bank is still in the idle state and is ready to be activated again.
相關(guān)PDF資料
PDF描述
IS42S32800B-6B 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6BI 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6BL 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6BLI 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6T 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S32800B-6B 功能描述:動態(tài)隨機存取存儲器 256M 8Mx32 166Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-6BI 功能描述:動態(tài)隨機存取存儲器 256M (8Mx32) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-6BI-TR 功能描述:動態(tài)隨機存取存儲器 256M (8Mx32) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-6BL 功能描述:動態(tài)隨機存取存儲器 256M 8Mx32 166Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-6BLI 功能描述:動態(tài)隨機存取存儲器 256M (8Mx32) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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