參數(shù)資料
型號(hào)： IS42VS16100C1-10T
廠商： INTEGRATED SILICON SOLUTION INC
元件分類(lèi)： DRAM
英文描述： 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
封裝： 0.400 INCH, PLASTIC, MS-24, TSOP2-50
文件頁(yè)數(shù)： 6/80頁(yè)
文件大小： 772K
代理商： IS42VS16100C1-10T
IS42VS16100C1
ISSI
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
04/15/05
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
I
CC1
Operating Current
(1,2)
Test Condition
One Bank Operation,
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
CKE
≤
V
IL
(
MAX
)
Min.
—
Max.
35
Unit
mA
CAS
Latency = 3
CAS
Latency = 2
—
40
I
CC2P
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Power-Down Mode)
Active Standby Current
(3)
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(3)
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Inputs are stable
Operating Current
(In Burst Mode)
(1,3)
t
CK
= 10 ns
—
0.3
mA
I
CC2PS
CKE
≤
V
IL
(
MAX
)
CLK
≤
V
IL
(
MAX
)
CKE
≥
V
IH
(
MIN
)
CS
≥
V
IH
(
MIN
),
CKE
≥
V
IH
(
MIN
)
Inputs are stable
CKE
≤
V
IL
(
MAX
)
t
CK
=
∞
—
0.3
mA
I
CC2N
t
CK
= 10 ns
—
6
mA
I
CC2NS
t
CK
=
∞
—
2
mA
I
CC3P
t
CK
= 10 ns
—
6
mA
I
CC3PS
CKE
≤
V
IL
(
MAX
)
CLK
≤
V
IL
(
MAX
)
CKE
≥
V
IH
(
MIN
)
CS
≥
V
IH
(
MIN
)
CKE
≥
V
IH
(
MIN
)
CLK
≤
V
IL
(
MAX
)
t
CK
=
∞
—
5
mA
I
CC3N
t
CK
= 10 ns
—
12
mA
I
CC3NS
t
CK
=
∞
—
10
mA
I
CC4
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
Page Burst
4 Banks activated
t
RC
= t
RC
(
MIN
)
CKE
≤
0.2V
CAS
latency = 2, 3
—
50
mA
I
CC5
I
CC6
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between V
DD
and Vss for each memory
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc
1
and Icc
4
depend on the output load. The maximum values for Icc
1
and Icc
4
are obtained with the output open state.
3. Inputs changed once every two clocks.
Auto-Refresh Current
Self-Refresh Current
CAS
latency = 2, 3
—
—
40
170
mA
μA
相關(guān)PDF資料
PDF描述
IS42VS16100C1-10TI 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10TL 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10T 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10TL 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42VS16100C1-10TI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TI-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TLI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TLI-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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