參數(shù)資料
型號(hào)： IS42VS16100C1-10TI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
封裝： 0.400 INCH, PLASTIC, MS-24, TSOP2-50
文件頁(yè)數(shù)： 17/80頁(yè)
文件大小： 772K
代理商： IS42VS16100C1-10TI
IS42VS16100C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
04/15/05
17
OPERATION COMMAND TABLE
(1,2)
Current State Command
Write Recovery
With Auto-
Precharge
Operation
No Operation, Idle State After t
DAL
Has Elapsed
No Operation, Idle State After t
DAL
Has Elapsed
No Operation, Idle State After t
DAL
Has Elapsed
Illegal
(10)
Illegal
(10)
Illegal
(10)
Illegal
(10)
Illegal
Illegal
No Operation, Idle State After t
RP
Has Elapsed
No Operation, Idle State After t
RP
Has Elapsed
No Operation, Idle State After t
RP
Has Elapsed
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
No Operation, Idle State After t
MCD
Has Elapsed
No Operation, Idle State After t
MCD
Has Elapsed
No Operation, Idle State After t
MCD
Has Elapsed
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
CSRASCAS WE
H
X
L
H
L
H
L
H
L
H
L
L
L
L
L
L
L
L
H
X
L
H
L
H
L
H
L
H
L
L
L
L
L
L
L
L
H
X
L
H
L
H
L
H
L
H
L
L
L
L
L
L
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
A11 A10A9-A0
X
X
H
X
L
X
H
V
L
V
H
V
L
V
H
X
L
OP CODE
X
X
H
X
L
X
H
V
L
V
H
V
L
V
H
X
L
OP CODE
X
X
H
X
L
X
H
V
L
V
H
V
L
V
H
X
L
OP CODE
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
X
X
X
V
V
V
V
X
X
X
X
V
(18)
V
(18)
V
(18)
X
X
Refresh
X
X
X
V
V
V
V
X
X
X
X
V
(18)
V
(18)
V
(18)
X
X
Mode Register DESL
Set
X
X
X
V
V
V
V
X
X
X
X
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
V
(18)
V
(18)
V
(18)
X
X
Notes:
1. H: HIGH level input, L: LOW level input, X: HIGH or LOW level input, V: Valid data input
2. All input signals are latched on the rising edge of the CLK signal.
3. Both banks must be placed in the inactive (idle) state in advance.
4. The state of the A0 to A11 pins is loaded into the mode register as an OP code.
5. The row address is generated automatically internally at this time. The DQ pin and the address pin data is ignored.
6. During a self-refresh operation, all pin data (states) other than CKE is ignored.
7. The selected bank must be placed in the inactive (idle) state in advance.
8. The selected bank must be placed in the active state in advance.
9. This command is valid only when the burst length set to full page.
10. This is possible depending on the state of the bank selected by the A11 pin.
11. Time to switch internal busses is required.
12. The IS42VS16100C1 can be switched to power-down mode by dropping the CKE pin LOW when both banks in the idle
state. Input pins other than CKE are ignored at this time.
13. The IS42VS16100C1 can be switched to self-refresh mode by dropping the CKE pin LOW when both banks in the idle
state. Input pins other than CKE are ignored at this time.
14. Possible if t
RRD
is satisfied.
15. Illegal if t
RAS
is not satisfied.
16. The conditions for burst interruption must be observed. Also note that the IS42VS16100C1 will enter the precharged state
immediately after the burst operation completes if auto-precharge is selected.
17. Command input becomes possible after the period t
RCD
has elapsed. Also note that the IS42VS16100C1 will enter the
precharged state immediately after the burst operation completes if auto-precharge is selected.
18. A8,A9 = don’t care.
相關(guān)PDF資料
PDF描述
IS42VS16100C1-10TL 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10T 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10TL 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10TLI 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42VS16100C1-10TI-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TLI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TLI-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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