參數(shù)資料
型號(hào)： IS42VS16100C1-10TL
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
封裝： 0.400 INCH, LEAD FREE, PLASTIC, MS-24, TSOP2-50
文件頁數(shù)： 16/80頁
文件大小： 772K
代理商： IS42VS16100C1-10TL
IS42VS16100C1
ISSI
16
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
04/15/05
OPERATION COMMAND TABLE
(1,2)
Current State Command
Write With
Auto-Precharge
Operation
CSRASCAS WE
A11 A10A9-A0
DESL
Burst Write Continues, Write Recovery And Precharge
When Done
Burst Write Continues, Write Recovery And Precharge
Illegal
Illegal
Illegal
Illegal
(10)
Illegal
(10)
Illegal
Illegal
No Operation, Idle State After t
RP
Has Elapsed
No Operation, Idle State After t
RP
Has Elapsed
No Operation, Idle State After t
RP
Has Elapsed
Illegal
(10)
Illegal
(10)
Illegal
(10)
No Operation, Idle State After t
RP
Has Elapsed
(10)
Illegal
Illegal
No Operation, Row Active After t
RCD
Has Elapsed
No Operation, Row Active After t
RCD
Has Elapsed
No Operation, Row Active After t
RCD
Has Elapsed
Illegal
(10)
Illegal
(10)
Illegal
(10,14)
Illegal
(10)
Illegal
Illegal
No Operation, Row Active After t
DPL
Has Elapsed
No Operation, Row Active After t
DPL
Has Elapsed
No Operation, Row Active After t
DPL
Has Elapsed
Read Start
Write Restart
Illegal
(10)
Illegal
(10)
Illegal
Illegal
H
X
X
X
X
X
X
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
X
V
V
V
V
X
X
X
V
V
V
V
X
X
X
V(18)
V(18)
V(18)
X
X
OPCODE
X
X
X
V
V
V
V
X
OP CODE
X
X
X
V
V V(18)
V V(18)
V
X
OP CODE
X
X
X
X
V
V V(18)
V
V V(18)
V
V V(18)
V
V
X
X
OP CODE
Row Precharge
X
X
X
V
V
V
V
X
X
X
X
V(18)
V(18)
V(18)
X
X
Immediately
Following
Row Active
X
X
X
V
V
V
V
X
X
X
X
V(18)
X
X
Write
Recovery
X
X
X
X
X
X
X
相關(guān)PDF資料
PDF描述
IS42VS16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10T 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10TL 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10TLI 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12T 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42VS16100C1-10TLI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TLI-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10T-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100E-10TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M (1Mx16) 100MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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