參數(shù)資料
型號: IS42VS16400C1-10T
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 4M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁數(shù): 12/56頁
文件大?。?/td> 509K
代理商: IS42VS16400C1-10T
IS42VS16400C1
ISSI
12
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
10/06/05
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Continued on next page.
Symbol
I
IL
Parameter
Input Leakage Current
Test Condition
0V
V
IN
V
DD
, with pins other than
the tested pin at 0V
Output is disabled, 0V
V
OUT
V
DD
I
OH
= –0.1 mA
I
OL
= 0.1 mA
Min.
–1.0
Max.
1.0
Unit
μA
I
OL
V
OH
V
OL
Output Leakage Current
Output High Voltage Level
(1)
Output Low Voltage Level
(1)
–1.5
1.5
0.2
μA
V
V
0.9 x V
DDQ
相關(guān)PDF資料
PDF描述
IS42VS16400C1-10TL 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10TLI 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12T 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12TI 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12TL 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42VS16400C1-10TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10TLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM