參數(shù)資料
型號: IS43R16160A-5T
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 16Meg x 16 256-MBIT DDR SDRAM
中文描述: 16M X 16 DDR DRAM, 0.65 ns, PDSO66
封裝: PLASTIC, TSOP2-66
文件頁數(shù): 35/56頁
文件大?。?/td> 792K
代理商: IS43R16160A-5T
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
35
ISSI
IS43R16160A
SLEW RATE DERATING VALUES
(Notes: 14) 0°C T
A
+70°C; V
DDQ
= +2.5V ±0.2V, V
DD
= +2.5V ±0.2V for
DDR400 V
DDQ
= +2.6V ±0.1V, V
DD
= +2.6V ±0.1V
SLEW RATE DERATING VALUES
(Note: 31) 0°C T
A
+70°C; V
DDQ
= +2.5V ±0.2V, V
DD
= +2.5V ±0.2V for
DDR400 V
DDQ
= +2.6V ±0.1V, V
DD
= +2.6V ±0.1V
NOTES:
1. All voltages referenced to VSS.
2. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal
reference/supply voltage levels, but the related specifications and device operation are guaranteed for the
full voltage range specified.
3. Outputs measured with equivalent load:
ADDRESS / COMMAND
SLEW RATE
t
IS
t
IH
UNITS
NOTES
0.500V / ns
0
0
ps
14
0.400V / ns
+50
+50
ps
14
0.300V / ns
+100
+100
ps
14
0.200V / ns
+150
+150
ps
14
Dat
a
, DQS, DM
SLEW RATE
t
DS
t
DH
UNITS
NOTES
0.500V / ns
0
0
ps
31
0.400V / ns
+75
+75
ps
31
0.300V / ns
+150
+150
ps
31
0.200V / ns
+225
+225
ps
31
Output
(V
OUT
)
V
TT
50
Reference
Point
30pF
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS43R16160A-5TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 16 256-MBIT DDR SDRAM
IS43R16160A-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 16 256-MBIT DDR SDRAM
IS43R16160B 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BL 功能描述:動態(tài)隨機(jī)存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube