參數(shù)資料
型號(hào)： IS61LF51218A-7.5TQLI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類(lèi)： DRAM
英文描述： 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
中文描述： 512K X 18 CACHE SRAM, 7.5 ns, PQFP100
封裝： LEAD FREE, TQFP-100
文件頁(yè)數(shù)： 1/32頁(yè)
文件大?。?/td> 215K
代理商： IS61LF51218A-7.5TQLI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/04/05
1
ISSI
IS61LF25636A
IS61LF51218A IS61VF51218A
256K x 36, 512K x 18
9 Mb SYNCHRONOUS FLOW-THROUGH
STATIC RAM
IS61VF25636A
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and
control
Burst sequence control using MODE input
Three chip enable option for simple depth expan-
sion
and address pipelining
Common data inputs and data outputs
Auto Power-down during deselect
Single cycle deselect
Snooze MODE for reduced-power standby
JTAG Boundary Scan for PBGA package
Power Supply
LF: V
DD
3.3V + 5%, V
DDQ
3.3V/2.5V + 5%
VF: V
DD
2.5V + 5%, V
DDQ
2.5V + 5%
JEDEC 100-Pin TQFP, 119-pin PBGA, and
165-pin PBGA packages
Lead-free available
MAY 2005
DESCRIPTION
The
ISSI
IS61LF/VF25636A and IS61LF/VF51218A are
high-speed, low-power synchronous static
RAMs
designed
to provide burstable,
high-performance
memory for commu-
nication and networking applications. The IS61LF/
VF25636A is organized as 262,144 words by 36 bits. The
IS61LF/VF51218A is organized as 524,288 words by 18
bits. Fabricated with
ISSI
's advanced CMOS technology,
the device integrates a 2-bit burst counter, high-speed
SRAM core, and high-drive capability outputs into a single
monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single
clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write
enable (
BWE
) input combined with one or more individual
byte write signals (
BWx
). In addition, Global Write (
GW
) is
available for writing all bytes at one time, regardless of the
byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV
(burst address ad-
vance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
相關(guān)PDF資料
PDF描述
IS61LF25672A-6.5B1I 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF25672A 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF25672A-6.5B1 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-6.5B2 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LF51218B-7.5TQLI 功能描述:IC SRAM 9MBIT 7.5NS 100LQFP 制造商:issi, integrated silicon solution inc 系列:- 包裝:托盤(pán) 零件狀態(tài):在售 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步 存儲(chǔ)容量:9M（512K x 18） 速度:7.5ns 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:100-LQFP 供應(yīng)商器件封裝:100-LQFP（14x20） 標(biāo)準(zhǔn)包裝:72
IS61LF51236A 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-6.5B2 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-6.5B2I 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18M (512Kx36) 6.5ns Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LF51236A-6.5B2I-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18M (512Kx36) 6.5ns Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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