參數(shù)資料
型號: IS61LF51218A-7.5TQLI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
中文描述: 512K X 18 CACHE SRAM, 7.5 ns, PQFP100
封裝: LEAD FREE, TQFP-100
文件頁數(shù): 19/32頁
文件大?。?/td> 215K
代理商: IS61LF51218A-7.5TQLI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/04/05
19
ISSI
IS61LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
IEEE 1149.1 SERIAL BOUNDARY SCAN (JTAG)
The IS61LF/VF25636A and IS61LF/VF51218A have a
serial boundary scan Test Access Port (TAP) in the PBGA
package only. This port operates in accordance with
IEEE
Standard 1149.1-1900, but does not include all functions
required for full 1149.1 compliance. These functions from
the
IEEE specification
are excluded because they place
added delay in the critical speed path of the SRAM. The
TAP controller operates in a manner that does not conflict
with the performance of other devices using 1149.1 fully
compliant TAPs. The TAP operates using JEDEC stan-
dard 2.5V I/O logic levels.
DISABLING THE JTAG FEATURE
The SRAM can operate without using the JTAG feature.
To disable the TAP controller, TCK must be tied LOW
(Vss) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be disconnected. They may
alternately be connected to V
DD
through a pull-up resistor.
TDO should be left disconnected. On power-up, the de-
vice will start in a reset state which will not interfere with the
device operation.
TEST ACCESS PORT (TAP) - TEST CLOCK
The test clock is only used with the TAP controller. All
inputs are captured on the rising edge of TCK and outputs
are driven from the falling edge of TCK.
TEST MODE SELECT (TMS)
The TMS input is used to send commands to the TAP
controller and is sampled on the rising edge of TCK. This
pin may be left disconnected if the TAP is not used. The pin
is internally pulled up, resulting in a logic HIGH level.
TEST DATA-IN (TDI)
The TDI pin is used to serially input information to the
registers and can be connected to the input of any register.
The register between TDI and TDO is chosen by the
instruction loaded into the TAP instruction register. For
information on instruction register loading, see the TAP
Controller State Diagram. TDI is internally pulled up and
can be disconnected if the TAP is unused in an application.
TDI is connected to the Most Significant Bit (MSB) on any
register.
31 30 29
. . .
Identification Register
2
1
0
2
1
0
0
x
. . . . .
Boundary Scan
Register*
2
1
0
Bypass Register
Instruction Register
TAP CONTROLLER
Selection Circuitry
Selection Circuitry
TDO
TDI
TCK
TMS
TAP CONTROLLER BLOCK DIAGRAM
相關(guān)PDF資料
PDF描述
IS61LF25672A-6.5B1I 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF25672A 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF25672A-6.5B1 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-6.5B2 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LF51218B-7.5TQLI 功能描述:IC SRAM 9MBIT 7.5NS 100LQFP 制造商:issi, integrated silicon solution inc 系列:- 包裝:托盤 零件狀態(tài):在售 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M(512K x 18) 速度:7.5ns 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.6 V 工作溫度:-40°C ~ 85°C(TA) 封裝/外殼:100-LQFP 供應(yīng)商器件封裝:100-LQFP(14x20) 標準包裝:72
IS61LF51236A 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-6.5B2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-6.5B2I 功能描述:靜態(tài)隨機存取存儲器 18M (512Kx36) 6.5ns Sync 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LF51236A-6.5B2I-TR 功能描述:靜態(tài)隨機存取存儲器 18M (512Kx36) 6.5ns Sync 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray