參數(shù)資料
型號(hào)： IS61LF51236A-7.5B2
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
中文描述： 512K X 36 CACHE SRAM, 7.5 ns, PBGA119
封裝： 14 X 22 MM, PLASTIC, BGA-119
文件頁數(shù)： 13/35頁
文件大小： 281K
代理商： IS61LF51236A-7.5B2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. E
04/21/06
13
ISSI
IS61LF25672A IS61LF51236A IS61LF102418A
IS61VF25672A IS61VF51236A IS61VF102418A
INTERLEAVED BURST ADDRESS TABLE (MODE = V
DD
or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
1,0
0,1
A1', A0' = 1,1
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
T
STG
P
D
I
OUT
V
IN
, V
OUT
Voltage Relative to Vss for I/O Pins
V
IN
Voltage Relative to Vss for
for Address and Control Inputs
V
DD
Voltage on V
DD
Supply Relative to Vss
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Value
–55 to +150
1.6
100
–0.5 to V
DDQ
+ 0.5
–0.5 to V
DD
+ 0.5
Unit
°C
W
mA
V
V
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
相關(guān)PDF資料
PDF描述
IS61LF51236A-7.5B2I 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-7.5B3 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-7.5B3I 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-7.5B3LI 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-7.5TQ 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LF51236B-7.5TQLI 功能描述:IC SRAM 18MBIT 7.5NS 100TQFP 制造商:issi, integrated silicon solution inc 系列:- 包裝:托盤 零件狀態(tài):有效 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:18M（512K x 36） 速度:7.5ns 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:100-LQFP 供應(yīng)商器件封裝:100-LQFP（14x20） 標(biāo)準(zhǔn)包裝:72
IS61LF6432A 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF6432A-8.5TQI 制造商:Integrated Silicon Solution Inc 功能描述:
IS61LF6432A-8.5TQLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF6436A 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
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