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參數(shù)資料
| 型號： | IS61LF51236A-7.5B2 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| 中文描述： | 512K X 36 CACHE SRAM, 7.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, PLASTIC, BGA-119 |
| 文件頁數(shù)： | 24/35頁 |
| 文件大?。?/td> | 281K |
| 代理商： | IS61LF51236A-7.5B2 |
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24
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. E
04/21/06
ISSI
IS61LF25672A IS61LF51236A IS61LF102418A
IS61VF25672A IS61VF51236A IS61VF102418A
INSTRUCTION CODES
Code
Instruction
Description
000
EXTEST
Captures the Input/Output ring contents. Places the boundary scan register
between the TDI and TDO. Forces all SRAM outputs to High-Z state. This
instruction is not 1149.1 compliant.
001
IDCODE
Loads the ID register with the vendor ID code and places the register between TDI
and TDO. This operation does not affect SRAM operation.
010
SAMPLE-Z
Captures the Input/Output contents. Places the boundary scan register between
TDI and TDO. Forces all SRAM output drivers to a High-Z state.
011
RESERVED
Do Not Use: This instruction is reserved for future use.
100
SAMPLE/PRELOAD
Captures the Input/Output ring contents. Places the boundary scan register
between
TDI and TDO. Does not affect the SRAM operation. This instruction does not
implement 1149.1 preload function and is therefore not 1149.1 compliant.
101
RESERVED
Do Not Use: This instruction is reserved for future use.
110
RESERVED
Do Not Use: This instruction is reserved for future use.
111
BYPASS
Places the bypass register between TDI and TDO. This operation does not
affect SRAM operation.
Select DR
Capture DR
0
Shift DR
Exit1 DR
Pause DR
Exit2 DR
Update DR
Select IR
Capture IR
0
Shift IR
Exit1 IR
Pause IR
Exit2 IR
Update IR
Test Logic Reset
1
Run Test/Idle
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
TAP CONTROLLER STATE DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LF51236A-7.5B2I | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51236A-7.5B3 | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51236A-7.5B3I | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51236A-7.5B3LI | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51236A-7.5TQ | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LF51236B-7.5TQLI | 功能描述:IC SRAM 18MBIT 7.5NS 100TQFP 制造商:issi, integrated silicon solution inc 系列:- 包裝:托盤 零件狀態(tài):有效 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:18M（512K x 36） 速度:7.5ns 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:100-LQFP 供應(yīng)商器件封裝:100-LQFP（14x20） 標(biāo)準(zhǔn)包裝:72 |
| IS61LF6432A | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF6432A-8.5TQI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61LF6432A-8.5TQLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF6436A | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
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